Combustion Processed Nickel Oxide and Zinc Doped Nickel Oxide Thin Films as a Hole Transport Layer for Perovskite Solar Cells

Combustion processed nickel oxide (NiOx) thin film is considered as an alternative to the sol-gel hole transport layer for perovskite solar cells (PSCs). In this paper, NiOx was prepared by solution–combustion process at 250 °C, a temperature lower than actual reaction temperature. Furthermore, properties of (HTL) in PSCs were enhanced incorporation zinc (Zn) films. X-ray diffraction and photoelectron spectroscopy results revealed that formation achieved annealing temperature, which confirms combustion reaction. The electrical conductivity greatly improved with Zn doping into crystal lattice. Better photoluminescence (PL) quenching, low PL lifetime decay responsible better charge separation 5% doped NiOx, device performance PSCs. maximum power conversion efficiency inverted made pristine Zn-NiOx HTL 13.62% 14.87%, respectively. Both devices exhibited stability PEDOT:PSS (control) ambient condition.